HY3810NA2P condition symbol used as parameter symbol

[fl4p]

huayi HY3810NA2P
Symbol         min     typ     max     unit   source    cond
Vds            100.0      ⎵       ⎵       V            IDS=250, Vgs=0.0    
Vds               ⎵       ⎵      1.0     μA            Vds=100, Vgs=0.0    
Vds              2.0     3.0     4.0      V            IDS=250             
Vds               ⎵    319.0      ⎵      pF            Frequency=1M, Vds=50, Vgs=0.0
Vds               ⎵     41.5      ⎵      nC            Id=50, Vds=80, Vgs=10
Vds               ⎵     58.9      ⎵      nC            Id=50, Vds=80, Vgs=10
Rds_on            ⎵      4.3     5.5     mΩ            IDS=50, Vgs=10      
Vsd               ⎵      0.9     1.3      V            ISD=50, Vgs=0.0     
trr               ⎵     45.9      ⎵      ns            ISD=50, dISD/dt=100 
Qrr               ⎵     91.7      ⎵      nC            ISD=50, dISD/dt=100 
Rg                ⎵   1500.0      ⎵      mΩ            F=1M, Vds=0.0, Vgs=0.0
Ciss              ⎵   7409.0      ⎵      pF            Frequency=1M, Vds=50, Vgs=0.0
Coss              ⎵    556.0      ⎵      pF            Frequency=1M, Vds=50, Vgs=0.0
tDon              ⎵     26.4      ⎵      ns            IDS=50, RG=2.5, VDD=50, Vgs=10
tRise             ⎵     97.3      ⎵      ns            IDS=50, RG=2.5, VDD=50, Vgs=10
tDoff             ⎵     64.2      ⎵      ns            IDS=50, RG=2.5, VDD=50, Vgs=10
tFall             ⎵    102.7      ⎵      ns            IDS=50, RG=2.5, VDD=50, Vgs=10
Qg                ⎵    159.2      ⎵      nC            Id=50, Vds=80, Vgs=10

[fl4p]

Fixed — no longer reproduces on the current pipeline.

Re-parsed datasheets/huayi/HY3810NA2P.pdf; resolved fields (one row per symbol, winning candidate):

Symbol         min      typ     max  unit
Vds              -        -   100.0  V
Idp              -        -   590.0  A
Id               -        -   180.0  A
Vgs_th         2.0      3.0     4.0  V
Vsd              -     0.86     1.3  V
trr              -     45.9       -  ns
Qrr              -     91.7       -  nC
Rg               -   1500.0       -  mΩ
Ciss             -   7409.0       -  pF
Coss             -    556.0       -
Crss             -    319.0       -
tDon             -     26.4       -  ns
tRise            -     97.3       -
tDoff            -     64.2       -
tFall            -    102.7       -
Qg               -    159.2       -  nC
Qgs              -     41.5       -
Rds_on           -      4.3     5.5  mΩ
Qgd              -     58.9       -

MosfetSpecs(100V,5.5mΩ Qg=159n Qsw=81.7n trf=97.3n/103n Qrr=91.7n Coss@50=556p)

The four rows that had picked up the condition's Vds — gate threshold, reverse transfer capacitance, and the two gate-charge components — now read Vgs_th 2/3/4 V, Crss 319 pF, Qgs 41.5 nC, Qgd 58.9 nC. The datasheets_db record is already refreshed, so no stale all-Vds fields remain in the store.

One unrelated defect on the same datasheet turned up while verifying this: v2 pulls the RDS(ON) row's symbol and unit up into the IGSS row above it, yielding a spurious Rds_on max=100 mΩ candidate (really the ±100 nA leakage spec). Different mechanism — row clustering, not symbol-from-condition — and currently masked by the correct candidate on all affected parts, so filed separately as #43.